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机译:p型AlGaN / AlN / GaN异质结构中二维空穴气体的证据
Department of Physics, Arizona State University, Tempe, AZ 85287-1504, U.S.A.;
Department of Physics, Arizona State University, Tempe, AZ 85287-1504, U.S.A.;
Department of Physics, Arizona State University, Tempe, AZ 85287-1504, U.S.A.;
Department of Physics, Arizona State University, Tempe, AZ 85287-1504, U.S.A.;
Institute of Optoelectronics, Ulm University, 89069 Ulm, Germany;
Institute of Optoelectronics, Ulm University, 89069 Ulm, Germany;
机译:金属有机化学气相沉积法制备AlGaN / GaN / AlN异质结构中的二维电子和空穴载流子
机译:二维电子气的AlN / GaN / AlGaN和AlN / GaN / InAlN异质结构的参数对其电性能和晶体管特性的影响
机译:高质量AlGaN / AlN / GaN和AlInN / AlN / GaN二维电子气异质结构的传输性能比较
机译:HVPE生长的具有高空穴浓度和迁移率的P型GaN外延层和AlGaN / GaN异质结构
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:不同成核层的溅射AlN模板上生长的AlGaN / GaN异质结构的研究
机译:高质量AlGaN / AlN / GaN和AlInN / AlN / GaN二维电子气异质结构的传输性能比较