Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors

摘要

Dilute nitrides are novel Ⅲ-Ⅴ semiconductors that have been developed for photonic and electronic devices. Although they have been investigated, some of their characteristics have not been established yet. In this study, the static dielectric constant of dilute nitrides was experimentally estimated from the exciton binding energy. The results imply that nitrogen incorporation in Ⅲ-Ⅴ semiconductors decreases both the static dielectric constant and bandgap. This behavior is opposite to that of conventional semiconductors.