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首页> 外文期刊>Applied physics express >Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method
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Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method

机译：碳添加钠通量法在高质量GaN晶种上生长大型GaN单晶

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摘要

Seeded growth on high-quality GaN seed was studied using a carbon-added Na flux method. A GaN single crystal (8.6 mm long, 5 mm high) was grown in 96 h without polycrystal formation on a crucible. Under a carbon-added condition, dependence of the growth rate of the seed and the growth habit on the flux composition was studied. We found that the growth rate was higher with Ga-poor flux, resulting in a high growth rate of 30 μm/h along the c-axis and 33 μm/h along the a-axis (66 μm/h for both sides). The growth habit changed from prismatic to pyramidal with increasing Ga composition.
机译：使用添加碳的Na助熔剂方法研究了高质量GaN种子上的种子生长。在96小时内生长了GaN单晶（长8.6 mm，高5 mm），而没有在坩埚上形成多晶。在添加碳的条件下，研究了种子生长速率和生长习性对通量组成的依赖性。我们发现，随着Ga流量的增加，生长速率会更高，从而导致c轴的生长速率为30μm/ h，a轴的生长速率为33μm/ h（两侧均为66μm/ h）。随着Ga组成的增加，生长习性从棱柱形变为棱锥形。

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  • 来源
    《Applied physics express》 |2010年第7期|P.075501.1-075501.3|共3页
  • 作者

    Mamoru Imade; rnYasuhiro Hirabayashi; rnYusuke Konishi; rnHiroshi Ukegawa; rnNaoya Miyoshi; Masashi Yoshimura; rnTakatomo Sasaki; rnYasuo Kitaoka; rnYusuke Mori;

  • 作者单位

    Division of Electric, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    rnDivision of Electric, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    rnDivision of Electric, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    rnDivision of Electric, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    rnDivision of Electric, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    rnDivision of Electric, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    rnDivision of Electric, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    rnDivision of Electric, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

    rnDivision of Electric, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;

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