CRYSTAL GROWTH METHOD OF SINGLE CRYSTAL GaN, AND METHOD OF MANUFACTURING SINGLE CRYSTAL GaN SUBSTRATE AND SINGLE CRYSTAL GaN SUBSTRATE

摘要

A GaN single crystal is grown by synthesizing GaN in vapor phase, piling a GaN crystal on a substrate, producing a three-dimensional facet structure including facets in the GaN crystal without making a flat surface, maintaining the facet structure without burying the facet structure, and reducing dislocations in the growing GaN crystal. The facet structure reduces the EPD down to less than 106 cm-2. IMAGE