Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

摘要

We demonstrate, for the first time, crack-free AIGaN/GaN high-electron-mobility transistors (HEMT) on 100 mm Si(111) by ammonia molecular beam epitaxy. High growth rate accelerates rapid transition from three-dimensional (3D) to two-dimensional (2D) growth and reduces the defect density. With increasing GaN buffer thickness, FWHM of GaN(002) XRD peak and dislocation density decrease. Highest electron mobilities of 1350 and 4290 cm~2/V·s were measured at RT and 90 K, respectively. Submicron gate devices exhibited good pinch-off characteristics with a maximum drain current (I_(Demax)) of 768mA/mm at V_g = +1 V and a maximum extrinsic transconductance (g_(mmax)) of 190 mS/mm at V_b = 6 V.