Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistor

摘要

In this study, we investigated the process-dependent dynamic on-resistance [R_(DS(on))] characteristics of recessed AIGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistors with a SiO_2 gate oxide. In order to improve the dynamic Ros(on) characteristics, the processing technology was carefully optimized, including post-metallization annealing and field plate formation. A threshold voltage of 2.0 V was achieved with a breakdown voltage of 1070 V. The fabricated device exhibited a DC R_(DS(on)) of 5.22 mΩ-cm~2 with very stable dynamic R_(DS(on)) characteristics, i.e., a less than 20% increase up to the drain voltage of 200 V.