Graphene modulation channel-width field effect transistors enabling high carrier velocity acceleration and bandgap introduction

摘要

The electrical properties of an advanced graphene FET structure with local channel width modulation were theoretically investigated with the aim of increasing the local electric field along the channel and creating a bandgap by introducing a graphene nanoribbon (GNR) array. A semi-classical Monte Carlo particle method was used to simulate near ballistic electron transport combination with ab-initio calculation for successfully determining electronic states. Performance improvement was achieved in terms of the carriers' transit time, even though there was a tradeoff between the bandgap creation and electron mobility in graphene.