Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel

摘要

We propose a high-electron-mobility transistor based on the insertion of a single InN atomic layer at the AlGaN/GaN interface. Using Schroedinger-Poisson simulations and first-principles calculations, we demonstrate that this design can increase the density, localization, and mobility of the two-dimensional electron gas, hence leading to significant performance improvements.