Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to similar to 1 W

摘要

We demonstrate 1 mm(2) blue light-emitting diodes with a negligible efficiency droop up to similar to 1 W. LEDs with 12- to 14-nm-thick single quantum wells were grown by metalorganic chemical vapor deposition on a free-standing semipolar (2021) GaN substrate. Packaged devices showed an external quantum efficiency of 42.3% at 20A/cm(2) with a negligible efficiency droop up to 991 mW at 900 mA. At 900 mA, the thermal droop and hot/cold factor were 8.2% and 0.92, respectively. The adoption of a thick active region resulted in excellent optical and thermal performance characteristics that are suitable for high-power lighting applications. (C) 2016 The Japan Society of Applied Physics