机译:多级声子晶体结构,用于降低薄膜压电硅上微机电系统谐振器的锚固损耗
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China;
Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan;
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China;
机译:使用谐振板形状和旋流晶体压电对硅MEMS谐振器的高质量系数设计
机译:具有非对称声子晶体束缚的硅上压电阵列谐振器
机译:薄膜压电对硅谐振器的框架结构大大提高了质量因子,抑制了杂散模式
机译:Matryoshka声子晶体,可减小Lamb波谐振器的锚固损耗
机译:通过对基板和系链进行修改,微机械加工的薄膜硅上压电薄膜横向延伸谐振器的性能得到提高。
机译:Q-系数提高薄膜压电对硅MEMS谐振器通过呼吸晶体反射器复合结构
机译:Q-系数提高薄膜压电对硅MEMS谐振器通过呼吸晶体反射器复合结构