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Piezoelectric-on-Silicon Array Resonators With Asymmetric Phononic Crystal Tethering

机译:具有非对称声子晶体束缚的硅上压电阵列谐振器

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摘要

The design, fabrication, and characterization of Piezoelectric-on-Silicon array resonators with asymmetric Phononic crystal (PnC) tethering for applications in high frequency reference oscillators is presented. A hybrid approach of mechanical arraying along with higher mode of operation is used for minimizing the motional resistance. For improving the Q-factor, novel asymmetric PnC tethers are developed that not only exhibit a larger bandgap than their symmetric PnC counterparts, but also have significantly better design optimization capabilities for fine tuning the tether properties. Third order longitudinal mode resonators operating at frequencies of 300 MHz with and without PnC tethering and with different number of resonators in the array were fabricated using SOI wafers. The measured characteristics of the resonators showed a peak unloaded Q-factor of 4454 and a motional resistance of 200 at 312 MHz for a seven resonator array. These results are comparable with the best reported in literature, in spite of a lesser silicon thickness. [2016-0194]
机译:提出了具有非对称声子晶体(PnC)系链的硅压电压电阵列谐振器的设计,制造和特性,适用于高频参考振荡器。机械排列与更高操作模式的混合方法用于最小化运动阻力。为了改善Q因子,开发了新型不对称PnC系链,它们不仅比其对称PnC系链具有更大的带隙,而且还具有明显更好的设计优化功能,可以微调系链的性能。使用SOI晶圆制造了三阶纵向模式谐振器,该谐振器以300 MHz的频率运行,带有和不带有PnC束缚,并且阵列中具有不同数量的谐振器。谐振器的测量特性表明,对于七个谐振器阵列,峰值空载Q因子为4454,运动电阻在312 MHz下为200。尽管硅厚度较小,但这些结果与文献报道的最佳结果相当。 [2016-0194]

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