Observation of Thermally-Activated Electron Traps in GaAs/AlAs/GaAs Heterostructures in Low-Frequency Noise Measurements

摘要

During our investigations of tunneling process in thin 7 nm thick GaAs/AlAs/GaAs vertical single-barrier tunneling structure with Si <5-doping inside the barrier we have observed fluctuations of the tunneling current which exhibited large Lorentzian noise with intensity depending on biasing voltage. We have shown that Lorentzian noise originates from multilevel random telegraph noise of the small number of fluctuators which influence the tunneling process. Time-domain analysis of the current noise measured for temperatures between 4.2 K and 50 K enabled to determine the thermal activation energies of these fluctuators lying between 0.8 and 3 meV.