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Low-loss metasurface optics down to the deep ultraviolet region

机译:低损耗的超表面光学器件直至深紫外区域

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摘要

Schematic representation of a metasurface unit cell, consisting of a high-aspect-ratio HfO pillar with height , an elliptical cross-section (principle axis lengths and ), and rotation angle , arranged on a SiO substrate to form a square lattice with a subwavelength lattice spacing . Specific optical functions are implemented via the variation in , , and as a function of the nanopillar position within the lattice. Schematic representation of the developed low-temperature ALD cycle using the TDMAH precursor, H O reactant, and a process temperature of  = 95 °C. Refractive index and extinction coefficient of the as-deposited HfO film, measured using spectroscopic ellipsometry. The values of at the three operation wavelengths targeted in this study are denoted by yellow stars. The dashed line indicates the position of the HfO bandgap . Scanning electron microscopy (SEM) image of the details of a fabricated polarization-independent metalens designed for operation at  = 325 nm, showing a lattice of 500 nm tall, circularly shaped HfO nanopillars with various diameters. The viewing angle is 52°. SEM image of the details of a fabricated spin-multiplexed metahologram designed for operation at  = 266 nm, showing a lattice of 480 nm tall, elliptically shaped HfO nanopillars with various in-plane cross-sections and rotation angles. The viewing angle is 52°. The nanopillars are coated with a layer of Au/Pd alloy (≈5 nm thick) to suppress charging during SEM imaging. Optical micrographs of the full metalens (top panel) and spin-multiplexed metahologram (bottom panel) corresponding to the metasurfaces described in , , respectively. Scale bars: 100 µm
机译:超表面晶胞的示意图,由高比高的HfO柱,高度,椭圆形横截面(原理轴长和)和旋转角组成,排列在SiO2衬底上形成亚波长的方格晶格间距。特定的光学功能是通过,和中的变化来实现的,并根据晶格中纳米柱的位置来实现。使用TDMAH前体,H O反应物和a = 95 C的加工温度开发的低温ALD循环的示意图。沉积的HfO薄膜的折射率和消光系数,使用椭圆偏振光谱法测量。本研究针对的三个工作波长处的值以黄色星号表示。虚线表示HfO带隙的位置。扫描电子显微镜(SEM)图像,显示了设计用于= 325 nm的与偏振无关的金属元素的细节,显示出500 nm高的圆形HfO纳米柱的直径。视角为52°。扫描自旋多重全息图的细节的SEM图像,设计用于在= 266 nm进行操作,显示了一个480 nm高的椭圆形HfO纳米柱的晶格,具有各种平面内横截面和旋转角度。视角为52°。纳米柱上镀有一层Au / Pd合金(约5 nm厚),以抑制SEM成像时的带电。分别对应于中所述的超表面的全金属(上图)和自旋多重全息图(下图)的光学显微照片。比例尺:100 µm

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