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Low-loss grating-coupled optical interfaces for large-volume fabrication with deep-ultraviolet optical lithography

机译:低损耗光栅耦合光学接口,可用于深紫外光刻的大批量制造

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Optical input/output interfaces between silicon-on-insulator (SOI) waveguides and optical fibers, allowing robust, cost-effective and low-loss coupling of light, are fundamental functional elements in the library of silicon photonic devices. Surface grating couplers are particularly desirable as they allow wafer-scale device testing, yield improved alignment tolerances, and are compatible with state-of-the-art integration and packaging technologies. While several factors jointly contribute to the coupler performance, the grating directionality is a critical parameter for high-efficiency fiber-chip coupling. To address this issue, conventional coupler designs typically call upon comparatively complex architectures to improve light coupling efficiency. Increasing the intrinsic directionality of the grating by exploiting the blazing effects is another promising solution. In this paper, we report on our recent advances in development of low-loss grating couplers that afford excellent directionality, close to the theoretical limit of 100%. In particular, we demonstrate, by theory and experiments, several implementations of blazed grating couplers with layout features that are compatible with deep-ultraviolet (deep-UV) optical lithography. Devices can be advantageously implemented on various photonic platforms, including industry-specific and the offerings of publicly accessible foundries. The first experimental realizations of uniform deep-UV-compatible couplers yield losses of -2.7 dB at 1.55-μm and a 3-dB bandwidth of 62 nm. A subwavelength-index-engineered impedance matching transition is used to reduce back-reflections down to -20 dB.
机译:绝缘体上硅(SOI)波导和光纤之间的光学输入/输出接口允许进行鲁棒,经济高效且低损耗的光耦合,是硅光子器件库中的基本功能元素。特别需要表面光栅耦合器,因为它们可以进行晶圆级器件测试,提高对准精度并与最新的集成和封装技术兼容。尽管有几个因素共同影响耦合器性能,但光栅方向性是高效光纤-芯片耦合的关键参数。为了解决这个问题,常规的耦合器设计通常需要相对复杂的架构来提高光耦合效率。通过利用闪耀效应来增加光栅的固有方向性是另一种有前途的解决方案。在本文中,我们报告了我们在低损耗光栅耦合器方面的最新进展,这些耦合器具有出色的方向性,接近理论极限100%。特别是,我们通过理论和实验证明了闪耀光栅耦合器的几种实现方式,其布局特征与深紫外(deep-UV)光刻技术兼容。可以有利地在各种光子平台上实现设备,包括特定于行业的产品和可公开访问的铸造厂的产品。均匀的深紫外兼容耦合器的第一个实验实现是在1.55μm处产生-2.7 dB的损耗,在62 nm处产生3dB的带宽。采用亚波长指数设计的阻抗匹配过渡可将背向反射降低至-20 dB。

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