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Deterministic fabrication of circular Bragg gratings coupled to single quantum emitters via the combination of in-situ optical lithography and electron-beam lithography

机译:通过原位光学光刻和电子束光刻相结合的确定性制造与单个量子发射器耦合的圆形布拉格光栅

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In the present work, we investigate the coupling of deterministically pre-selected In(Ga)As/GaAs quantum dots (QDs) to low Q circular Bragg grating cavities by employing a combination of state-of-the-art low-temperature in-situ optical lithography and electron-beam lithography. The spatial overlap between the cavity mode and quantum emitter is ensured through the accurate determination of the QD position via precise interferometric position readout. Simultaneously, the high precision of the electron-beam lithography is exploited for the cavity fabrication. In order to optimize the spectral overlap, prior to cavity fabrication, finite-difference time-domain simulations are performed to estimate the spectral position of the cavity mode. A Purcell factor of 2 together with an increased count rate is reported for a deterministically positioned cavity where the emission line is detuned by 3.9 nm with respect to the cavity mode. This non-negligible Purcell enhancement for large detunings and, thus, the large range where this can be achieved points towards the possibility of using the cavity for the simultaneous enhancement of spectrally distinct transitions from the same quantum emitter located spatially in the mode maximum. Furthermore, investigations on the bending of the cavity membrane and the effects on the cavity mode and QD emission are presented. Published under license by AIP Publishing.
机译:在目前的工作中,我们将结合最新技术的低温In-Gas的组合,研究确定性预先选择的In(Ga)As / GaAs量子点(QD)与低Q圆形Bragg光栅腔的耦合。原位光刻和电子束光刻。腔模和量子发射器之间的空间重叠是通过精确的干涉位置读数通过对QD位置的精确确定来确保的。同时,利用电子束光刻的高精度来制造腔体。为了优化光谱重叠,在腔制造之前,执行有限差分时域仿真以估计腔模的光谱位置。对于确定位置的腔,报告了Purcell因子为2且计数率增加的情况,其中,发射腔相对于腔模式失谐了3.9 nm。对于大的失谐而言,这种不可忽略的Purcell增强,因此可以实现的大范围指向,有可能使用腔体同时增强来自位于模式最大值的空间中同一量子发射器的光谱不同跃迁的可能性。此外,研究了腔膜的弯曲以及对腔模和QD发射的影响。由AIP Publishing授权发布。

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