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Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy

机译:毫秒光电子能谱对Si(111)上氧化物层热分解的化学和动力学洞察

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摘要

Despite thermal silicon oxide desorption is a basic operation in semiconductor nanotechnology, its detailed chemical analysis has not been yet realized via time-resolved photoemission. Using an advanced acquisition system and synchrotron radiation, heating schedules with velocities as high as 100 K.s−1 were implemented and highly resolved Si 2p spectra in the tens of millisecond range were obtained. Starting from a Si(111)-7 × 7 surface oxidized in O2 at room temperature (1.4 monolayer of oxygen), changes in the Si 2p spectral shape enabled a detailed chemical analysis of the oxygen redistribution at the surface and of the nucleation, growth and reconstruction of the clean silicon areas. As desorption is an inhomogeneous surface process, the Avrami formalism was adapted to oxide desorption via an original mathematical analysis. The extracted kinetic parameters (the Avrami exponent equal to ~2, the activation energy of ~4.1 eV and a characteristic frequency) were found remarkably stable within a wide (~110 K) desorption temperature window, showing that the Avrami analysis is robust. Both the chemical and kinetic information collected from this experiment can find useful applications when desorption of the oxide layer is a fundamental step in nanofabrication processes on silicon surfaces.
机译:尽管热氧化硅解吸是半导体纳米技术中的基本操作,但尚未通过时间分辨的光发射实现其详细的化学分析。使用先进的采集系统和同步加速器辐射,实现了速度高达100 K.s -1 的加热计划,并获得了数十毫秒范围内的高分辨率Si 2p光谱。从室温下在O2中氧化的Si(111)-7×7表面(1.4单层氧气)开始,Si 2p光谱形状的变化使得能够对表面氧的重新分布以及成核,生长进行详细的化学分析以及清洁硅区域的重建。由于解吸是不均匀的表面过程,因此Avrami形式主义通过原始的数学分析适用于氧化物的解吸。发现提取的动力学参数(Avrami指数等于〜2,〜4.1 eV的活化能和特征频率)在宽的(〜110 K)解吸温度范围内非常稳定,表明Avrami分析是可靠的。当氧化层的脱附是硅表面纳米加工过程中的基本步骤时,从该实验收集的化学和动力学信息都可以找到有用的应用。

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