半导体级高纯氨水中痕量杂质元素的检测

摘要

用高分辨电感耦合等离子体质谱测定半导体级高纯氨水中的痕量金属杂质，用直接稀释法，把高纯氨水稀释10倍后，用标准加入法进行上机检测，前处理简单、快速，避免了在样品前处理时的污染问题。高分辨电感耦合等离子体质谱可以消除多分子离子干扰，降低检出限，提高定量准确性。该方法的检出限为0.31～14.4 ng/L ，加标法回收率为91.5%～108.6%。该方法简单，结果可靠，适用于高纯氨水中痕量元素的快速测定。%Determination of trace metal in semiconductor grade ammonia by HR-ICP-MS, sample preparation was just simple diluted ten times, and all elements were analyzed with standard addition. The result indicate that the method is easier and fast, the method avoid the pollution of sample. HR-ICP-MS can eliminate multimolecular ion disruption, reduce detect limit, improve quantitative accuracy. The detection limits were 0.31 to 14.4 ng/L with recoveries of 91.5%to 108.6%. The experimental results show that the method is simple, the result is reliable, and suitable for rapid determination of trace elements in semiconductor grade ammonia.