碳化硅(SiC)作为第3代宽禁带半导体的核心材料之一,具有高击穿场强、高饱和电子漂移速率、高热导率、化学稳定性好等优良特性,是制作高压、大功率、高频、高温和抗辐射新型功率半导体器件的理想材料.近年来,国内外在SiC单晶衬底制备方面取得了重大进展.对SiC单晶衬底材料的最新发展进行回顾,包括SiC单晶生长技术、直径扩大、缺陷控制等,对SiC单晶材料的发展趋势进行了展望.随着高质量大尺寸SiC衬底材料的迅速发展,大大降低了SiC器件的制造成本,为SiC功率器件的发展提供了坚实基础.%As a key representative material for the third-generation wide bandgap semiconductors,silicon carbide(SiC) has many superior properties such as high critical breakdown electric field,high thermal conductivity,high carrier saturation velocity and excellent chemical stability,which makes the SiC device suitable for high voltage,high power,high frequency and strong radiation application.In recent years,bulk growth of SiC single crystals has made significant progress.The developments of SiC substrates meterial,including the growth techniques for SiC bulk growth is introduced,the enlargement of substrate diameter,defect control and perspectives of SiC substrates.With the rapid development of high-quality and large-diameter SiC substrate materials,the manufacturing cost of SiC devices is greatly reduced,which lays on a solid foundation for the development of SiC power devices.
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