单层二硫化钼的力学性能及缺陷工程研究进展

摘要

Single-layer molybdenum disulfide (SLMoS2) is analogous to a graphene layered nanomaterial with pseudo two-dimen-sional honeycomb lattice structure.Compared with the complexity of obtaining the semiconducting graphene,the semiconductor ma-terial SLMoS2is considered to be more superior due to its direct bandgap,and is believed to be one of candidates for the next gener-ation semiconductor material to replace the traditional silicon.This paper briefly summarizes the progress in the study of the outstand-ing physical,chemical and mechanical properties,introduces the inherent structure defects and grain boundaries of SLMoS2induced in the procedures of fabrication and characterization and overviews the effect of the defects and grain boundaries appearing in the theoritical and experimental research methods on the physical and chemical properties, then, proposes several promising research fields related to the defect engineering of SLMoS2.%单层二硫化钼(SLMoS2)是类似石墨烯的准二维蜂窝晶格层状纳米材料.相较于半导体性石墨烯在制备上的复杂性,具有直接带隙半导体特性的SLMoS2被认为更具优势,是取代传统硅半导体的新一代候选材料之一.介绍了SLMoS2优异的物理化学特性及其力学性能的近期研究进展、SLMoS2在制备和表征过程中存在的固有缺陷类型和晶界,以及近年来基于理论和实验方法所揭示的缺陷和晶界对其物理化学性能的影响,并对其缺陷工程的若干研究领域提出了展望.