APPARATUS FOR FORMING SINGLE-LAYER MOLYBDENUM DISULFIDE FOR MANUFACTURING FET AND METHOD FOR MANUFACTURING FET USING SINGLE-LAYER MOLYBDENUM DISULFIDE

摘要

The present invention relates to a method for manufacturing a field effect transistor by using a patterned molybdenum disulfide film which comprises the following steps of: manufacturing a shadow mask on which an opening pattern for a field effect transistor is formed; arranging the shadow mask on a substrate; forming a molybdenum disulfide film pattern passing the opening pattern on the substrate by performing a deposition process; and forming an electrode by using an electrode mask on the thin pattern.