首页> 外国专利> MANUFACTURING METHOD OF A MOLYBDENUM DISULFIDE NANOSTRUCTURE CAPABLE OF TRANSFERRING A MOLYBDENUM DISULFIDE NANOSTRUCTURE ON A DESIRED SUBSTRATE

MANUFACTURING METHOD OF A MOLYBDENUM DISULFIDE NANOSTRUCTURE CAPABLE OF TRANSFERRING A MOLYBDENUM DISULFIDE NANOSTRUCTURE ON A DESIRED SUBSTRATE

机译:能够将二硫化钼纳米结构转移到期望的基质上的二硫化钼纳米结构的制造方法

摘要

PURPOSE: A manufacturing method of a molybdenum disulfide nanostructure is provided to easily grow the monolayer of molybdenum disulfide using a catalytic substrate and a protective layer.;CONSTITUTION: A manufacturing method of a molybdenum disulfide nanostructure includes the following steps of: forming a molybdenum disulfide nanostructure(20) on a catalytic substrate; annealing the molybdenum disulfide nanostructure; forming a protective layer(30) on the molybdenum disulfide nanostructure; and removing the catalytic substrate. The molybdenum disulfide nanostructure with the protective layer is transferred on a target substrate. The protective layer is removed. The molybdenum disulfide nanostructure is the monolayer of molybdenum disulfide. The catalytic substrate is one or the mixture of Ni, Cu, Fe, and Co. The protective layer is one of poly(methyl methacrylate)(PMMA), photoresist(PR), and electron resist(ER).;COPYRIGHT KIPO 2013
机译:目的:提供一种二硫化钼纳米结构的制造方法,以利用催化基底和保护层容易地生长二硫化钼单层。组成:二硫化钼纳米结构的制造方法包括以下步骤:形成二硫化钼催化基质上的纳米结构(20);退火二硫化钼纳米结构;在二硫化钼纳米结构上形成保护层(30);和去除催化底物。具有保护层的二硫化钼纳米结构被转移到目标衬底上。去除保护层。二硫化钼纳米结构是二硫化钼的单层。催化基质是Ni,Cu,Fe和Co的一种或混合物。保护层是聚甲基丙烯酸甲酯(PMMA),光致抗蚀剂(PR)和电子抗蚀剂(ER)之一。; COPYRIGHT KIPO 2013

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