包含寄生参数的大功率半导体激光器等效电路模型

摘要

For simulating high-power semiconductor laser driver ,it is necessary to build an equivalent load model .Due to lacks of parasitic parameters ,the existing circuit model of laser diode (LD ) is insufficient of simulating high-power semiconductor laser .Based on test data of high-power semiconductor laser ,by means of analyzing and improving rate equation of LD ,an equivalent circuit model w as built including sparasitic pa-rameters .Simulation results show that the V-I curve and P-I curve of equivalent circuit model are consistent with the manufacture’s ,so it can be used as the equivalent load of high-power semiconductor laser driver .%对大功率半导体激光器驱动电源仿真研究时，需要建立体现大功率半导体激光器电气特性的等效负载模型，目前的LD（Laser Diode）电路模型由于缺乏寄生参数而不适用。本文根据大功率半导体激光器的测试数据，通过分析改进LD的速率方程，建立了包含寄生参数的大功率半导体激光器等效电路模型。仿真结果表明：该等效电路模型的 V-I曲线和P-I曲线与厂家给出的曲线一致，可以作为仿真大功率半导体激光驱动电源的等效负载。