影响GaN基蓝光LED能带结构与光谱特性关系的仿真研究

摘要

GaN based InGaN /GaN quantum well blue light-emitting diode(LED)structure was used to research theoptical properties bythe Silvaco TCAD software in this paper.The results reveal that,the peak value of spectrum with higher applied voltage shifted to lower wavelength(blueshift),and another peak arisen at 0.365 μm.The luminous efficiency increased rapidly when the forward current was small and gradually became saturated with the further increase of the forward current.The sample with higher In fraction and thicker well width shown red shift and lower luminous efficiency.The simulation results provide some basis reference for the design and optimization of blue LED with InGaN/GaN quantum well structure.%本文采用Silvaco TCAD软件对GaN基InGaN/GaN量子阱蓝光发光二极管(LED)的光谱特性进行了仿真研究.研究结果表明:光谱会随着注入电压的增加而产生蓝移现象,并出现0.365 μm处的紫外光发光峰;发光效率在正向电流较小时增长很快,随着正向电流进一步增加而逐渐趋于饱和;随着量子阱中In组分和量子阱阱层厚度的增加,发光光谱出现红移现象,并且发光效率下降.仿真结果对GaN基InGaN/GaN量子阱结构蓝光LED的设计和优化提供一定的依据.