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机译:使用电光仿真方法研究GaN基蓝色LED的光输出特性
Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China|Changzhou Inst Technol Res Solid State Lighting, Changzhou 213161, Peoples R China;
Changzhou Inst Technol Res Solid State Lighting, Changzhou 213161, Peoples R China|Beijing SSL S&T Promot Ctr, Beijing 100083, Peoples R China;
Changzhou Inst Technol Res Solid State Lighting, Changzhou 213161, Peoples R China|Hohai Univ, Coll Mech & Elect Engn, Changzhou 213022, Peoples R China;
Changzhou Inst Technol Res Solid State Lighting, Changzhou 213161, Peoples R China|Lamar Univ, Dept Mech Engn, Beaumont, TX 77710 USA;
Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China;
Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China|Changzhou Inst Technol Res Solid State Lighting, Changzhou 213161, Peoples R China|Delft Univ Technol, EEMCS Fac, Delft, Netherlands;
Electro-optical simulation; LED chip; GaN; Light intensity distribution;
机译:基于Ag / SiO2纳米粒子的等离子增强纳米孔图案化的InGaN / GaN蓝色发光二极管中的光输出
机译:确定GaN基蓝光LED结温的非接触方法
机译:通过折射率匹配的Si_3N_4 / GaN纳米线阵列使表面粗糙的垂直GaN基LED的增强的光输出
机译:基于蒙特卡罗模拟的基于GaN / AlGaN的蓝色LED的光输出建模。
机译:利用纳米技术在Si上生长,制造和表征基于InGaN / GaN的蓝色,绿色和黄色LED。
机译:蒙特卡洛射线追踪法对AlGaInP基红色和GaN基蓝/绿倒装芯片微型LED的光提取分析
机译:具有不同纹理表面和GaN层厚度的垂直GaN基发光二极管光输出功率的实验研究
机译:利用氮化铟镓(InGaN)/氮化镓(GaN)异质结构的负极化特性实现具有深紫外(<250nm)发射的频率倍增蓝绿激光(2年级)。