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METHOD FOR MANUFACTURING GaN SELF-STANDING SUBSTRATE, GaN SELF-STANDING SUBSTRATE, AND BLUE LED
METHOD FOR MANUFACTURING GaN SELF-STANDING SUBSTRATE, GaN SELF-STANDING SUBSTRATE, AND BLUE LED
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机译:GaN自持基体,GaN自持基体和蓝光LED的制造方法
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摘要
PROBLEM TO BE SOLVED: To manufacture at a low cost a GaN single crystal self-standing substrate of an off-angle having a crystal orientation displaced from (0001) instead of (0001) exact.;SOLUTION: When a (111) GaAs wafer having an off-angle is used as a ground substrate and GaN is vapor deposited on the ground substrate, a GaN crystal inclined in the same orientation and having the same off-angle as those of the ground substrate is grown. Alternately, a GaN self-standing substrate having an off-angle can be manufactured by using a (111) GaAs substrate having an off angle as a ground substrate, then forming a mask having a plurality of windows on the substrate, and after growing a GaN single crystal layer on the resultant mask, removing the ground substrate. By such a process, a GaN crystal having an off-angle of 0.1-25° can be manufactured.;COPYRIGHT: (C)2007,JPO&INPIT
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