Self-standing GaN substrate, GaN crystal, GaN single crystal manufacturing method, and semiconductor device manufacturing method

摘要

To provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. The self-standing GaN substrate has an angle between the normal of the main surface and the m-axis of 0 degrees or more and 20 degrees or less, and the size of the projected image in the c-axis direction when the main surface is vertically projected onto the M plane. Is 10 mm or more, and when the a-axis length is measured on the intersection line between the main surface and the A plane, the section length is 6 mm or more and the a-axis length variation within the section is 10.0 × 10 −5 mm or less. A low strain interval is observed.