SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, GaN SINGLE CRYSTAL MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nonpolar or semipolar GaN substrate having an improved size and a crystal quality.SOLUTION: A self-standing GaN substrate has an angle of 0 degrees to 20 degrees between the normal line of a main surface and an m axis, and a low-strain section, in which the size of a c-axis direction of a projected image at the time when said main surface is normally projected on an M face is 10 mm or more, and in which the section length is 6 mm or more whereas the a-axis length fluctuation within a section is at or less than 10.0×10angstroms.