在镀镍蓝宝石衬底上生长 ZnO 薄膜研究

摘要

As a cheap film material with such advantages as low toxicity and easily obtained raw material ,Zinc oxide (ZnO) is of great potential of development.However ZnO films is gcnerally obtained by the way of het-eroepitaxy and crystal quality needs to be improved .In this paper,high quality ZnO thin films grows on Ni/Al2 O3 template by PLD method .Using Ni as a buffer layer ,to ease the lattice between the sapphire substrate and the epitaxial layer ZnO mismatch ,high quality ZnO thin films can be obtained .Comparative testing and characterization of the samples growing under different conditions have been done .The results indicate that the crystal quality of ZnO films growing on nickel/sapphire is better than that directly growing on sapphire . Meanwhile,PLD growth temperature has a greater impact on the quality of ZnO film .At 550 ℃ growth condi-tions,the half width of rocking curve of the growing c -plane ZnO film is 0.547°and the crystal quality is ob-viously better than ZnO thin film without a buffer layer .%氧化锌（ ZnO）是一种原料易得、价廉、毒性小的光电薄膜材料，具有巨大的开发潜力，但 ZnO薄膜一般是采用异质外延的方式获得，晶体质量有待提高。采用激光脉冲沉积（ PLD ）方法，在镀镍（ Ni）蓝宝石衬底上生长高质量ZnO薄膜。由于镀镍工艺成熟，能够起缓冲作用，缓解 ZnO 外延层和蓝宝石衬底之间的晶格失配，从而能获得较高质量的 ZnO 薄膜。通过不同条件下生长的样品对比测试及表征，结果表明，在Ni／Al2 O3上生长极性面ZnO 薄膜比直接在蓝宝石上生长 ZnO 薄膜晶体质量更好；同时发现PLD 的生长温度对 ZnO薄膜有较大影响，在550℃生长条件下，生长的极性面（ c面） ZnO薄膜摇摆曲线半峰宽为0．547°，晶体质量明显优于无缓冲层生长的ZnO薄膜。