应用反短/窄沟效应优化亚阈值SRAM单元

摘要

为缓解传统存储器单元尺寸设计方法在亚阈值区引入的面积和外围电路开销问题,采用晶体管的反短沟效应和反窄沟效应改进传统方法,不仅解决了亚阈值电压下单元面积和外围辅助电路开销过大的问题,还进一步提升了单元的噪声容限和读写速度.以10管静态随机存储器单元为研究对象,基于中芯国际130 nm工艺进行物理实现,测试结果表明,相比于传统方法,所提出的尺寸设计方法节省单元面积开销76%,提升静态噪声容限30.5%,使静态随机存储器能稳定地在0.32 V的电压下工作.%To mitigate the cost of additional area and peripheral circuit,which is caused by conventional dimension adjusting way in the subthreshold region,the reverse short-channel and the reverse narrow-channel effect are applied to improve the conventional way.Hence,the additional cost of area and peripheral circuit is reduced,and noise margin of the Static Random Access Memory is also enhanced.In addition,the reading and writing performance is simultaneously optimized.A 10-T Static Random Access Memory cell is fabricated in 130 nm process,and test results show that the effects implemented in the cell can save about 76% of area consumption,and facilitate 30.5% enhancement in the noise margin compared with the conventional way.Consequently,the SRAM can function steadily under the voltage of 0.32 V.