PZT薄膜厚度对BMT/PZT复合薄膜结构及介电性能的影响∗

摘要

采用液相旋涂法制备了 Ba(Mg1/3 Ta2/3)O3(BMT)/Pb(Zr0．52 Ti0．48)O3(PZT)复合薄膜,研究了PZT薄膜厚度对 BMT/PZT 复合薄膜结构及介电性能的影响.随着 PZT 薄膜厚度的增加,BMT/PZT 复合薄膜的介电常数呈线性增加.当 PZT 薄膜的厚度较小时,会明显地增加 BMT/PZT 复合薄膜的介电损耗；当继续增加 PZT 薄膜的厚度,介电损耗反而下降直到与BMT薄膜的介电损耗值接近.这是由于 PZT的介电常数与介电损耗均明显高于 BMT 薄膜所致,而异质界面的存在抑制了PZT薄膜中畴壁的运动,使其对复合薄膜介电损耗的影响减弱.研究结果表明, PZT薄膜的引入可以提升BMT薄膜的介电常数而对介电损耗的影响不大.%Ba(Mg1/3 Ta2/3 )O3 (BMT)/Pb(Zr0.52 Ti0.48 )O3 (PZT)multilayered thin films have been prepared by liq-uid spin coating method and the effect of PZT thin films thickness on the BMT/PZT multilayered thin films have been investigated.With the thickness of the PZT thin films increasing,the dielectric constant of BMT/PZT multilayered thin films increases linearly.When the thickness of the PZT thin films is small,the dielectric loss of the BMT/PZT multilayered thin films increase significantly;while further increase the thickness of PZT thin films,the BMT/PZT multilayered thin films'dielectric loss declined until close to the value of the BMT thin films.This is due to the dielectric constant and loss of the PZT thin films are significantly higher than BMT thin films,and the existence of heterogeneous interface suppresses the domain wall’movement in PZT thin films,so the impact on the multilayered thin films dielectric loss weakened.The results show that the introduction of PZT thin films can enhance the dielectric constant of the BMT thin films while has little effect on the dielectric loss.