METHOD FOR FABRICATING PZT THIN FILM TO REDUCE DEFECT AND FORM THIN FILM STRUCTURE MADE OF ONLY PURE PEROVSKITE

摘要

PURPOSE: A method for fabricating a PZT(PbZrxTix-1O3) thin film is provided to reduce a defect and form a thin film structure made of only pure perovskite by forming a PZT thin film by a MOCVD(metal organic chemical vapor deposition) method. CONSTITUTION: An electrode(52) is formed on a substrate(51). A PZT initial thin film(54) is formed on the electrode. A PZT later thin film(56) is formed on the initial thin film. The PZT initial and later thin films are formed by a MOCVD method. A mixture gas of Pb, Zr and Ti that has a value (Pb/(Zr+Ti)1) in which the density of Pb is relatively greater than the sum of the density of Zr and Ti is used as a raw material gas(57) supplied for forming the PZT initial thin film.