This work reports studies on crystallinity, dielectric and ferroelectric properties of the PZT thin films prepared by oxide precursor method and crystallized by conventional and RTA method. For film deposited on Si substrate the measured degree of tetragonality (C_T/a_T) were 1.04 and 1.01 for film crystallized by conventional and RTA method, respectively. Dielectric constant of film crystallized by RTA at all frequency range was greater than values of dielectric constant of films crystallized by conventional furnace. Ferroelectric properties of the film crystallized by RTA presented a higher P_r and lower E_c than film crystallized by conventional electric furnace.
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