不同基底对退火制备Ni纳米岛掩模形貌的影响

摘要

目前,刻蚀自组装在GaN薄膜上Ni纳米岛的掩模的方法是制备GaN纳米柱阵列常用手段.但是,这将对后续制备出的纳米柱产生Ni污染.除此之外,直接将GaN系的材料暴露在高温下进行Ni纳米岛掩模的制备,会对GaN材料表面产生一定的热腐蚀损伤.因此,以GaN、SiO2、Al2O3和Six Ny分别为基底,对退火自组装在这4种基底上的Ni纳米岛形貌进行了较为系统的研究.发现850℃的退火温度下,Al2O3基底上Ni薄膜形成的纳米岛的形貌最为规整,为最优化衬底.%It is a common approach that uniform GaN nano-rod arrays are fabricated by inductively coupled plas-ma etching using self-assembly nickel nano-islands as the masks on GaN layer.However,the GaN nano-roads, fabricated in following step,will be contaminated by the adhesive metal Ni.Moreover,the GaN,exposed at high temperature without capping layer,will suffer the decomposition for breaking the Ga-N bonds.Hence,a detailed research on the self-assembly nickel nano-islands fabricated on the substrates of GaN,SiO2 ,Al2O3 and Six Ny ,respectively.In fact,Al2O3 are the optimal substrate among the four kinds of dielectric substance, where the nano-islands are fabricated with uniformly round morphology under annealing temperature of 850 ℃.