Molecular lithography process for nanopattern generation in a substrate, comprises producing a mask structure with a self-styled organization, from single unbranched macromolecules with negative load

摘要

The molecular lithography process for nanopattern generation in a substrate (19) with a mask structure (16) from single unbranched macromolecules (09), comprises producing the mask structure with a self-styled organization, from single unbranched macromolecules with negative load, transporting and stretching the unbranched macromolecules in a flowing transport fluid (05) under influence of a pressure gradient or potential gradient of electric longitudinal fields (11) with adjustable field strength and constant polarity in passage direction of an entropic barrier. The molecular lithography process for nanopattern generation in a substrate (19) with a mask structure (16) from single unbranched macromolecules (09), comprises producing the mask structure with a self-styled organization, from single unbranched macromolecules with negative load, transporting and stretching the unbranched macromolecules in a flowing transport fluid (05) under influence of a pressure gradient or potential gradient of electric longitudinal fields (11) with adjustable field strength and constant polarity in passage direction of an entropic barrier with the plus pole at output of the entropic barrier in the passage direction of the entropic barrier, and deflecting the unbranched macromolecules during its passage through the entropic barrier in a first plane from the passage direction through applying a first electric transverse field with adjustable field strength and deflectable polarity on the entropic barrier in a first transverse direction to passage direction, applying the mask structure in contact with a chemically reinforced negative-photoresist as substrate, completely processing the negative-photoresist through light exposure, and heating, generating and removing the unbranched macromolecules from the substrate from ready-processed negative-photoresist. The unbranched macromolecules are deflected during its passage through the entropic barrier also in a second plane from the passage direction through applying a second electric transverse field with adjustable field strength and deflecting poles on the entropic barrier in a second transverse direction to passage direction. The entropic barrier is used with a formation of electric local fields within the entropic barrier. The negative-photoresist is applied in the entropic barrier after the production of the mask structure and discharging of the transport fluid. The negative-photoresist is used as transport fluid. The entropic barrier is used in the form of a photonic crystal in the formation of a nanocolumn field. The individual nanocolumn is metallized and electrically controlled for forming the electric local fields. The metallization is carried out with thin layer electrode materials. The electric control is caused for linear guiding of unbranched macromolecules over direct current and for the horizontal and vertical guiding over alternating current, where the electric field strength is 5-100 V/cm. The biomolecules of DNA is used as unbranched macromolecules with negative load. The UV-sensitive negative-photoresist is used. The denatured, unbranched macromolecules are flushed out from the substrate under external pressure- and/or electric field influence.