考虑MOS效应的锥型硅通孔寄生电容解析模型

摘要

该文采用求解泊松方程等数学方法，提出了考虑MOS效应的锥型硅通孔(TSV)寄生电容解析模型。基于铜材料TSV，对比了解析模型与Ansoft Q3D参数提取模型，得出在偏置电压为-0.4 V,0.5 V和1.0 V时，对于锥型TSV侧面倾角为75°,80°,85°和90°4种情况，多个参数变化时解析模型最大均方根误差分别为6.12%,4.37%,3.34%和4.84%，忽略MOS效应时，最大均方根误差分别达到210.42%,214.81%,214.52%和211.47%，验证了该解析模型的准确性和考虑MOS效应的必要性。Ansoft HFSS仿真结果表明，考虑MOS效应以后S11的最大减幅大约为19 dB,21S 的最大增幅大约为0.01 dB，锥型TSV的传输性能得到改善。%An analytical model for the parasitic capacitance of tapered Through-Silicon-Vias (TSV) with MOS effect is proposed by solving Poisson’s equation. A comparison between the analytical model and Ansoft Q3D parameter extraction model is given based on copper TSV. The results show that in the bias voltage of-0.4 V, 0.5 V and 1.0 V, for the tapered TSV slop wall angles of 75°, 80°, 85° and 90°, the maximum Root Mean Square (RMS) errors of analytical model are respectively 6.12%, 4.37%, 3.34%and 4.84%over a wide range of multiple parameters;when MOS effect is ignored, the maximum RMS errors are respectively 210.42%, 214.81%, 214.52%and 211.47%, and it proves that the analytical model is accurate and the consideration of MOS effect is necessary to the analytical model. Taking into account the MOS effect, the maximum damping of 11S and the maximum increase of 21S are about 19 dB and 0.01 dB respectively, simulated by Ansoft HFSS, so the transmission performance of tapered TSV is improved.