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机译:低k介质衬里的硅通孔制造及其对寄生电容和漏电流的影响
Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,Institute of Microelectronics, A'STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore 117685;
Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798;
Institute of Microelectronics, A'STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore 117685;
Institute of Microelectronics, A'STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore 117685;
Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798;
机译:新型超薄Al2O3与低k介电层作为双层衬里的新型集成,用于通过硅通孔的电容优化和应力缓解
机译:通过电导和电容技术探测低k介电硅界面上的电荷陷阱
机译:真空紫外线辐射对低k有机硅酸盐电介质的俘获电荷和漏电流的影响
机译:三相电流源逆变器中的接地漏电流,取决于功率半导体的寄生电容
机译:铜/多孔低k互连中多孔低k的泄漏电流行为和传导机理的研究:外在因素的影响。
机译:用于3D EWOD器件制造的浸涂型高电容离子凝胶电介质的研究
机译:超孔SiOCH低k材料中应力引起的泄漏电流与介电性能的相关性