一种适用于相变存储器锁相环时钟的新型电荷泵

摘要

设计了一款低噪声、低功耗的电荷泵,适用于相变存储器驱动电路中的锁相环时钟.与其它结构的电荷泵相比较,此款电路对时钟馈通与电荷注入等干扰免疫力强.根据相变存储器对驱动电路低噪声的性能要求,本电路具有低的热噪声和1/f噪声.仿真结果表明输出电压在0℃～80℃温度范围内最大仅有1 lmV的偏差,其与PFD所产生的相位噪声在1MHz频率下为-102dB.电路采用40nm CMOS工艺设计,电源电压2.5V,功耗0.125mW,芯片面积60μm×55μm.%A low phase noise,low power charge pump for the PLL clock of phase change memory drive circuit is presented.Comparing different structure circuit,the proposed charge pump has strong immunity to the clock feedback and charge injection.Based on the low noise requirement of phase change memory,the charge pump has low heat noise and 1/f noise.The maximum deviation of output voltage is only 1 lmV within temperature range from 0℃ to 80℃.The phase noise is -102dB@1MHz with PFD circuit.Fabricated in CMOS 40rnm process,the device occupies the area of 60μ.m×55μm,and consumes 0.125mW of power from a single 2.5V supply.