This paper introduced the eutectic bonding technology in MEMS hermetic packaging based on Ag - Sn solder film. The structure of multi-layer material for eutectic bonding and the pattern of sealing rings were designed. A good bonding effect was realized in the N2 protecting environment at 221 ℃,and the average shear strength was 9.4 MPa. Helium leak rate is no more than 5 × 10-4 Pa ·cm3/s in the comparative experiments through three months,which meets the GJB548B -2005 standard and verifies the feasibility of Ag - Sn eutectic bonding technology in MEMS hermetic packaging.%研究了在MEMS气密性封装中基于Ag - Sn焊片的共晶键合技术.设计了共晶键合多层材料的结构和密封环图形,在221℃实现了良好的键合效果,充N2保护的键合环境下,平均剪切强度达到9.4 Mpa.三个月前后气密性对比实验表明氦泄漏不超过5×10-4 Pa.cm3/s,满足GJB548B-2005标准规定,验证了Ag - Sn共晶键合技术在MEMS气密封装中应用的可行性.
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