In order to solve the problem of microelectrode array fabricated by MEMS technology,that the adhesion between the electrode and the substrate is small and easy to fall off,a fabrication technique of metal microelectrode array based on over-plating was proposed.At room temperature,an electroforming solution was configured by CuSO 4· 5H2O of 190 g/mL,H2SO4of 60 g/L, Cl-of 70 mg/L and appropriate amount of additives.Using acidic copper plating process, the current density of 1.5 A/dm2was set up,electroforming for 20 h,then after polishing treatment,the metal microelectrode arrays with height of 200 μm,900 μm,line width of 200 μm and center distance of 300 μm were obtained.The metal microelectrode array formed in the adjacent area during the metal deposition process to form a deep hole,these micropores greatly increased the surface area of the three-dimensional microelectrodes.It can be seen that the electroforming process is a convenient,rapid and low cost microelec-trode preparation process.%为了解决MEMS工艺制备金属微电极阵列时,电极与基底结合力小,易脱落等问题,提出了基于Over-plating成型的过电铸法金属微电极阵列制备技术.在常温下,选择190 g/mL的CuSO4· 5H2O、60 g/L的H2SO4、70 mg/L的氯离子以及适量的添加剂配置成的电铸液,并采用酸性镀铜工艺,设置电流密度1.5 A/dm2,过电铸20 h,经抛光处理后,分别得到了高度200 μm、900 μm,线宽200 μm,中心距300 μm的柱金属微电极阵列.所制备的金属微电极阵列,在相邻区域金属沉积过程中相互影响形成了较深的孔缝,这些微孔极大地增加了三维微电极的表面积.可见,过电铸工艺是一种便捷、快速、低成本的微电极制备工艺.
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