PECVD法氮化硅薄膜制备工艺的研究

摘要

Silicon nitride thin films were deposited successfully on Si substrates by plasma-enhanced chemical vapor deposition(PECVD). The thickness and refractive index of the thin iflms were tested by ellipsometer and proiflometry, respectively. The inlfuences of silane-ammonia lfow ratio(SAR)and spacing on the performance of silicon nitride thin iflms were studied. Results showed that the thickness and refractive index of thin iflms increased with SAR, and the etching rate in HF decreased rapidly after annealing.%采用等离子体增强化学气相沉积法（PECVD）在单晶硅衬底上制备了氮化硅薄膜，分别使用膜厚仪、椭圆偏振仪等手段对薄膜的厚度、折射率等参数进行了表征。研究了硅烷氨气流量比、极板间距等工艺参数对氮化硅薄膜性能的影响，发现当硅烷氨气流量比增加时，薄膜厚度和折射率均随之增加，并发现退火工艺可以有效降低氮化硅薄膜的氢氟酸腐蚀速率。