首页> 外文会议>Conference on Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, May 6-8, 2002, Cannes, France >Optical interferometry investigation of internal stress and opto-mechanical characteristics of silicon oxynitride thin films fabricated by PECVD
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Optical interferometry investigation of internal stress and opto-mechanical characteristics of silicon oxynitride thin films fabricated by PECVD

机译:PECVD法制备氧氮化硅薄膜的内部应力和光机械特性的光学干涉法研究

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摘要

The full-field interferometry is very well suited for evaluation of micromechanical and material properties of microsystems. In this paper, we presented a Twyman-Green interferometer for MEMS/MOEMS testing. The measurements of out-of-plan displacements of special silicon membranes with thin film of SiO_xN_y deposited by PECVD enable the analysis of opto-mechanical properties.
机译:全场干涉仪非常适合评估微系统的微机械和材料特性。在本文中,我们介绍了用于MEMS / MOEMS测试的Twyman-Green干涉仪。通过PECVD沉积具有SiO_xN_y薄膜的特殊硅膜的平面外位移的测量,可以分析光机械性能。

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