一种基于0.5μm CMOS工艺圆片级可靠性评估方法*

摘要

论文提出了0.5μm CMOS工艺圆片级可靠性（WLR）评估的方法，为工艺、电路可靠性提高和及时在线控制开拓了新思路。论文针对0.5μm工艺中金属电迁移以及器件热载流子等失效项，分别给出了相关内容的工艺物理机理、测试结构、测试方法和结果。测试得出单一电迁移失效、热载流子失效寿命可以达到1×109数量级（几十年），初步实现了工艺可靠性的在线监控。%This article illustrates the wafer level reliability evaluation method of 0.5 μm CMOS process, gives an innovation thought about process reliability estimation and on line process control. This article discussed some physical mechanisms that caused failure, such as electrical migration of metal, hot carrier etc. Meanwhile, this article give out the related test structure and method. Test results indicate that the lifetime of the single electrical migration of metal or hot carrier is over 1×109 seconds, using this methods, we make the realization of process reliability evaluation monitor.