磁控溅射AZO透明导电薄膜及其光电性能的研究

摘要

采用磁控溅射法在石英玻璃衬底上制备AZO薄膜。利用X射线衍射仪、原子力显微镜、四探针测试仪和透射光谱仪等手段研究了衬底温度对AZO薄膜结构、形貌、光电性能的影响。结果表明，所有的AZO薄膜均为纤锌矿结构且具有较好的c轴取向。薄膜表面平整，晶粒约为55.56 nm。随着衬底温度升高，薄膜电阻率先降低而后升高，当衬底温度为350℃时，电阻率最小，约为1.41×10–3Ω·cm，而且该薄膜具有较好的透光率，约为84%。%AZO thin film was fabricated on quartz glass substrate using magnetron sputtering. The effects of substrate temperature on the structure, optical and electrical properties of AZO films were investigated by X-ray diffraction, atomic force microscopy, four probe tester and transmission spectroscopy. Results show that all of AZO thin films possess the hexagonal wurtzite structure withc axis preferential orientation. These AZO films have flat surfaces and crystallite size of about 55.56 nm. With the increase of the substrate temperature, the resistivity of AZO thin films first decrease and then increase. When the substrate temperature is 350℃, the resistivity of AZO thin films has a minimum, which is about 1.41×10–3Ω·cm. The average transmittance of the AZO thin films on the glasses in the band of visible light is about 84%.