本文简述了半导体器件的温度测量方法,重点介绍了适用于氮化镓(GaN)基高电子迁移率晶体管(HEMTs)器件的四种热测试技术及其在GaN基HEMTs器件的应用情况.分析表明四种方法具有其各自的优劣之处:电学法虽然只能得到结区平均温度,但能对器件进行直接测量而无需破坏封装;红外法虽然空间分辨率较低,但能简便得到器件温度分布图和进行器件的静态、动态测量;拉曼散射技术具有约1μm的高空间分辨率的优点,但需要逐点扫描、测量耗时长,适合于局部小范围的温度测量;热反射法具有亚微米量级的高空间分辨率,能简便得到器件温度分布图,十分适合用于GaN基HEMTs器件的热测试中.最后指出先进的热反射法很可能成为GaN基HEMTs器件热特性研究的发展方向.%Temperature measurement methods of semiconductor devices are summarized in this paper.Particularly,four thermal testing technologies and the application of these methods in high-electron mobility gallium nitride (GaN)based high electron mobility transistor (HEMTs) devices are analyzed.The results show that the four technologies have their advantages and disadvantages.Although electronic method can only measure the average temperature of the junction area,it can directly measure the device temperature without damage to the package.The spatial resolution of infrared method is relatively low,but it can easily measure the device temperature distribution and both the static and dynamic measurement.Raman scattering technology has the advantage of high spatial resolution of about 1 μrn,but it requires point-by-point scanning and therefore suitable for local small-scale temperature measurement.Thermoreflectance imaging method not only possess high spatial resolution of sub-micron magnitude,but also can easily obtain device temperature profile,making it very suitable for GaN-based HEMTs device thermal test.It is pointed out that the thermoreflectance imaging method is likely to be the development direction of GaN-based HEMTs device thermal characteristics research.
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