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Transient thermoreflectance for device temperature assessment in pulsed-operated GaN-based HEMTs

机译:瞬态热反射技术,用于基于脉冲的GaN基HEMT中的器件温度评估

摘要

Transient thermoreflectance measurements were demonstrated as a reliable technique for the thermal assessment of pulsed-operated HEMTs. Thermal modelling and time-resolved micro-Raman thermography were used for the determination of thermoreflectance coefficients of the metal contacts under study. The need of the extraction of the thermoreflectance coefficient value for each metal present at the device was demonstrated.
机译:瞬态热反射率测量是一种可靠的技术,可用于对脉冲操作的HEMT进行热评估。使用热建模和时间分辨的显微拉曼热成像法确定了所研究金属触点的热反射系数。证明了需要提取器件中存在的每种金属的热反射系数值。

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