GaN-Based HEMT Device

摘要

The present disclosure discloses a GaN-based HEMT device, comprising a gate electrode, a source electrode, and a drain electrode, and further comprising a substrate, a buffer layer, a GaN channel layer, a first barrier layer, a second barrier layer and a dielectric passivation layer, the buffer layer being sequentially stacked from bottom to top, wherein an N-type ion injection region is formed in the GaN channel layer and the first barrier layer, the source electrode and the drain electrode are formed on an upper surface of the N-type ion-implanted region; the gate electrode is formed on an upper surface of the first barrier layer and is located between the source electrode and the drain electrode; and the dielectric passivation layer encircles the gate electrode so as to isolate the gate electrode from the N-type ion-implanted region.