磁控溅射制备的AlN薄膜的结构、组分及性能分析

摘要

AIN thin films were prepared by DC magnetron reactive sputtering on p- Si (111) and glass substrates. The properties of structure and component, surface morphologies, thickness, optics and infrared spectra of the films were studied by using X -ray diffraction (XRD) , X-ray EDS, Atomic force microscopy (AFM) , step profilometer, UV - visible spectrophotometer and Fourier transformation infrared spectra( FTIR). It shown that h - AlN(100)and AlN(110) diffraction peak was presented in the samples when the sputtering current added up to 0.40A; the maximum height of thin films was less than 30nm; A1N samples had high transmission in the wave length range of 250—1000nm, its band — gap value was 5.94eV; an intense absorption exited at 677. 12cm - 1 of wavenumber in the Fourier transformation infrared spectra when the sputtering current was 0. 40A.%采用DC磁控溅射法,分别在p-Si(111)和玻璃基片上沉积AlN薄膜.利用X射线衍射(XRD)、X射线能谱仪(EDS)、原子力显微镜(AFM)、台阶仪紫外/可见分光光度计和傅里叶变换红外光谱仪(FTIR)分析了薄膜的结构组分、表面形貌、膜厚、光学性能和红外吸收特性.结果 表明:溅射电流对A1N薄膜的生成有很大的影响,当电流增加到0.40A时,薄膜中出现明显的h-AlN(100)和AlN(110)衍射峰；样品的最大高度都小于30nm；样品在250-1000nm波长范围内具有较高的透射率,当溅射电流为0.4A时,薄膜的禁带宽度约为5.94eV；在677.12cm1处出现强烈的吸收峰.