用磁控溅射法制备的CdS薄膜的光电特性

摘要

The optical and electrical properties of CdS films prepared by R. F. Magnetron Sputtering were analyzed. The sputtered film was annealed at 200 ℃ ,300 ℃ ,400 ℃ and 500 ℃, Respectively. SEM photos revealed that the annealed CdS thin film had improved quality than un-annealed film. By measurement from SEM, the thickness of CdS thin film is 10 μm, which means the sputtering rate of the CdS thin film is 7.5 μn/h. I-V test has showed that after annealing at 400 ℃, the photoconductivity of the film is most outstanding and the ratio of the photo current and dark current can be up to 2 134. 8.%研究了采用磁控溅射方法制备的CdS薄膜的工艺及光电性质,在200℃、300℃、400℃和500℃下分别进行50 min的退火处理,SEM扫描发现退火处理后的CdS薄膜成膜质量更好.通过SEM测得CdS薄膜厚度为10 μm,计算出CdS薄膜的溅射速率为7.5 μm/h.通过探针I-V测试表明,400℃退火处理下,CdS薄膜的光电导特性最为优异,光电流与暗电流之比可达2 134.8.