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Optical and electrical characteristics of pure CdS thin Films for different thickness

机译:不同厚度纯CdS薄膜的光电特性

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Conventional spray pyrolysis technique was employed for the preparation of cadmium sulphide (CdS) thin films that deposited onto glass substrates at 573 K from cadmium acetate and thiourea precursor solution for different deposition time. The surface morphology, compositional study and optical properties of the films have been characterized by Scanning Electron Microscopy (SEM) attached with an EDX and UV spectroscopy, respectively. The SEM micrographs of deposited film showed uniform deposition over the substrate. The EDX spectra of CdS thin films revealed that films are stoichiometric. All the films demonstrated more than 70% transmittance at wavelengths longer than 600 nm. The optical absorption coefficient (α) of the CdS films was determined from transmittance spectra. For different thickness (110 - 250nm) of the films, the direct band gap was found in the range of 2.15~2.48 eV. Resistivity (ρ) of CdS thin films was measured in the temperature range of 300 to 550 K. Activation energy (ΔE) was found in the range from 0.047 to 0.078 eV. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15678 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 33-41, 2013
机译:常规喷雾热解技术用于制备硫化镉(CdS)薄膜,该薄膜从乙酸镉和硫脲前体溶液以573 K沉积在玻璃基板上,时间不同。膜的表面形态,组成研究和光学性质已分别通过附有EDX和UV光谱的扫描电子显微镜(SEM)表征。沉积膜的SEM显微照片显示在基材上均匀沉积。 CdS薄膜的EDX光谱表明薄膜是化学计量的。所有膜在超过600 nm的波长处均显示超过70%的透射率。由透射光谱确定CdS膜的光吸收系数(α)。对于不同厚度(110-250nm)的薄膜,直接带隙在2.15〜2.48eV范围内。在300至550 K的温度范围内测量了CdS薄膜的电阻率(ρ)。发现活化能(ΔE)在0.047至0.078 eV的范围内。 DOI:http://dx.doi.org/10.3329/jbas.v37i1.15678孟加拉科学院学报,第37,No.1,33-41,2013年

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