三元系和四元系GaN基量子阱结构的显微结构

摘要

GaN-based quantum wells are the core structure of optoelectronic devices such as light-emitting diodes,laser diodes. Our experiments show that,In0.2Ga0.8N/GaN ternary alloys quantum wells and Al0.15In0.01Ga0.84N/In0.2Ga0.8N quaternary alloy quantum wells,two different quantum well structures for laser diode,have significant differences about the electrical properties and luminous efficiency. In this paper,we study on microscopic characteristics of these two different quantum well structure. Through high-resolution X-ray diffraction,we got the satellite peaks of these two different alloys quantum wells by ω/2θ scanning. Using X-ray diffraction,we got the rocking curves by ω scanning of two kinds of MQWs symmetry face (002) and asymmetric face (101),(102),(103),(104),(105) and (201). Through atomic force microscope,photoluminescence spectra and high resolution X-ray diffraction,it revealed the different nature of the macro factors of the In0.2Ga0.8N/GaN ternary alloys and Al0.15In0.01Ga0.84N/In0.2Ga0.8N quaternary alloys.%GaN基量子阱是光电子器件如发光二极管、激光二极管的核心结构.实验表明,采用InGaN/GaN三元和AlInGaN/GaN四元两种不同量子阱结构的激光二极管的发光性质和发光效率有明显差别,研究了这两种不同量子阱结构的显微特征.利用原子力显微镜表征了样品的(001)面;通过高分辨X射线衍射对两种量子阱结构的(002)面作ω/2θ扫描测得其卫星峰并分析了两种不同量子阱结构的界面质量;利用X射线衍射对InGaN/GaN 和AlInGaN/GaN这两种量子阱的(002)、(101)、(102)、(103)、(104)、(105)和(201)面做ω扫描,进而得到其摇摆曲线.最后利用PL谱研究了它们的光学性能.通过这些显微结构的分析和研究,揭示了InGaN/GaN三元和AlInGaN/GaN四元两种不同量子阱结构宏观性质不同的结构因素.